Method for preparing a fluoro-containing polyimide film

ABSTRACT

A method for blending fluorine into a polyimide free of fluorine comprises the steps of generating fluorine radicals in a fluorine based gas, removal of any charge particles from the gas to leave the fluorine radicals in the gas, and exposing a polyimide free of fluorine to an irradiation of the fluorine radicals so that the irradiated fluorine radicals penetrate into and inside the polyimide without showing any reaction to the removed charge particles on a surface of the polyimide.

This application is a division of application Ser. No. 08/487,243, filedJun. 13, 1995, U.S. Pat. No. 5,702,773.

BACKGROUND OF THE INVENTION

The invention relates to a method for preparing a fluoro-containingpolyimide film.

Fluoro-containing polyimides or polyimides containing fluorine have nowbeen receiving a great deal of attention for use in semiconductordevices as dielectric films, inter-layer insulators, or passivationfilms and in place any compounds being industrially applicable due toits excellent properties such as a high thermal stability and a lowdielectric constant.

The dielectric films or the insulators are required to have as low adielectric constant as possible when used in the multilevelinterconnection systems in order to reduce a signal delay. A largedielectric constant provides a large parasitic capacitance which causesa signal delay, resulting in a difficulty in allowing integratedcircuits to show the required high speed performance. Dielectricconstants of SiO₂ and Si₃ N₄ are about 4 and 7 respectively, which aretoo high to apply those to the dielectric films involved in thesemiconductor integrated circuits or any other semiconductor deviceshaving high integrations and showing high frequency and speedperformances.

Although the polyimides have a dielectric constant of 3 which is lowerthan those of silicon dioxide and silicon nitride, an insulator ordielectric material is required to have a further reduced dielectricconstant and a higher thermal stability suitable for use in theintegrated circuits or semiconductor devices facing to the issues of aconsiderable scaling down and a realization of a high speed performance.Reductions in a width of the interconnection and in a distance ofadjacent interconnections results in undesirable increases in aparasitic capacitance of the interconnections and also in a parasiticresistance thereof. The reductions in the parasitic capacitance of theinterconnections and also in the parasitic resistance thereof need areduction in the dielectric constant of the inter-layer insulator. Theinterconnection delay or the circuit delay is associated with theparasitic capacitance of the interconnections and the parasiticresistance thereof. It has been generally known that the interconnectiondelay is proportional to the square root of the dielectric constant ofthe inter-layer insulator between the interconnections. From the abovedescriptions, it could be understood that a possible low dielectricconstant of the inter-layer insulator between the interconnections isrequired to reduce the interconnection delay or the circuit delay.

Polyimides including fluorine have a higher thermal stability and alower dielectric constant than polyimides free of fluorine. For thatreason, fluoro-containing polyimides or polyimides containing fluorinehave now been receiving a great deal of attention.

Such fluoro-containing polyimides are, however, associated with seriousproblems in production, for example, a low yield and an extremely highcost. The following description will then focus on the conventionalproduction method for the fluoro-containing polyimides.

According to the conventional production method, the fluoro-containingpolyimide is prepared by a thermal polymerization of polyimide monomersalready containing fluorine, for example, a thermal polymerization offluoro-tetracarbonic acid or fluoro-diamine. Namely, thefluoro-containing polyimide has to be prepared via the polymerization ofthe fluoro-containing polyimide monomers. The above problem is that theyield of the polymerization of the fluoro-containing polyimide monomersis considerably low. The polymerization reactivity of thefluoro-containing polyimide monomers is also low. A small molecularweight of polyimide main-chain makes it difficult to control thefluorine contents in the polyimide. This results in a considerableincrease of the production cost for the fluoro-containing polyimides,further leading to an increase of the manufacturing cost for thesemiconductor integrated circuits or the semiconductor devices.

To settle the above problems, a treatment for rendering the polyimidesto contain fluorine has to be carried out after the polymerization ofthe fluoro-free polyimide monomers. There has been proposed a method forblending fluorine into polymers by irradiation of AC or DC plasma offluorine-based gases onto the polymer. This method is disclosed in theJapanese Patent Publication No. 57-6107 and 6-9803. This method is,however, associated with a problem within that the fluorine irradiatedon the polymer by the plasma gas irradiation resides only in a surfaceregion of the polymer but neither penetrates nor is diffused into a deepregion of the polymer. As a result, the surface region of the treatedpolymer is merely changed in its property. Notwithstanding, it isrequired to blend fluorine not only in a surface region of the polyimidebut also in a deep region thereof.

It is therefore, required to develop a quite novel method for blendingthe fluorine throughout the parts of the polyimide having already beenprepared by polymerization of the fluoro-free polyimide monomers with acontrolled fluoro-concentration profile in a depth direction of thepolyimide.

SUMMARY OF THE INVENTION

Accordingly, it is an object of the present invention to provide a novelmethod of preparing a fluoro-containing polyimide free from any problemsas described above.

It is a further object of the present invention to provide a novelmethod of preparing a fluoro-containing polyimide at a high yield.

It is a furthermore object of the present invention to provide a novelmethod of preparing a fluoro-containing polyimide at a low cost.

It is a still further object of the present invention to provide a novelmethod for blending fluorine thoughout the parts of a polyimide havingalready been prepared by a polymerization of fluoro-free polyimidemonomers with a controlled fluoro-concentration profile in a depthdirection of the polyimide.

It is another object of the present invention to provide a novel methodfor forming a fluoro-containing polyimide on a semiconductor base layerwith a high adhesiveness between those.

It is still another object of the present invention to provide a novelmethod of forming a fluoro-containing polyimide on a semiconductor baselayer at a high yield.

It is yet another object of the present invention to provide a novelmethod of forming a fluoro-containing polyimide on a semiconductor baselayer at a low cost.

It is a moreover object of the present invention to provide a novelmethod for forming on a semiconductor base layer a fluoro-containingpolyimide with a suitable fluoro-concentration profile in a depthdirection for improvement in adhesiveness of the polyimide to thesemiconductor base layer.

It is an additional object of the present invention to provide a novelsystem for exposing a polyimide film on a semiconductor base layer to anirradiation of fluoro-containing gas plasma for blending fluorine intothe polyimide film.

The above and other objects, features and advantages of the presentinvention will be apparent from the following descriptions.

The invention provides a novel method for blending fluorine into apolyimide free of fluorine comprising the following steps. Fluorineradicals are generated in a fluorine based gas. Any charge particles areremoved from the gas to leave the fluorine is radicals in the gas. Apolyimide free of fluorine exposed to an irradiation of the fluorineradicals so that the irradiated fluorine radicals penetrate into thepolyimide without showing any reaction to the removed charge particleson the surface of the polyimide.

The polyimide has at least a temperature sufficiently high forfacilitating a thermal diffusion of the fluorine radicals into a deepregion of the polyimide. The fluorine radicals may be generated in aplasma gas by a glow discharge of the fluorine based gas in a vacuum.Alternatively, the fluorine radicals may be generated by a dissociationof the fluorine based gas where the dissociation is caused byirradiation of the fluorine based gas onto a tungsten heater in vacuum.The removal of any charge particles from the gas is carried out byhaving the gas including the charge particles, the fluorine radicals andthe neutral particles pass through a control grid applied with apredetermined voltage.

The present invention also provides a method for forming a polyimidefilm containing fluorine on a base layer comprising the following steps.A polyimide film free of fluorine is formed on a base layer. Fluorineradicals are generated in a fluorine based gas. Removal of any chargeparticles from the gas is carried out to leave the fluorine radicals inthe gas. The polyimide film is exposed to an irradiation of the fluorineradicals so that the irradiated fluorine radicals penetrate into andinside of the polyimide without showing any reaction to the removedcharge particles on the surface of the polyimide film. A temperature ofthe polyimide film and a time for the irradiation are so controlled thata fluorine concentration of the polyimide film equals or approaches zeroat an interface of the polyimide film to the base layer. The temperatureis sufficiently high for facilitating a thermal diffusion of thefluorine radicals into a deep region of the polyimide. The polyimidefree of fluorine is prepared by the steps of applying a polyamide acidon the base layer by a spin coating method and subjecting the appliedpolyamide acid to a heat treatment to cause a thermal polymerization tothereby form a polyimide film free of fluorine. The base layer may be ametal layer, an insulation layer, or a semiconductor layer.

The present invention also provide a polyimide film containing fluorineformed on a base layer. The polyimide film has such a fluorineconcentration profile that a fluorine concentration approaches or equalszero at an interface of the polyimide film to the base layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the present invention will hereinafter be fullydescribed in detail with reference to the accompanying drawings.

FIG. 1 is a view illustrative of a novel method for blending fluorineinto a polyimide film formed on a silicon substrate according to thepresent invention.

FIG. 2 is a diagram illustrative of a system for exposing a polyimidefilm formed on a silicon substrate to an irradiation of afluoro-containing gas plasma for blending fluorine into the polyimidefilm according to the present invention.

FIG. 3 is a diagram illustrative of a relationship of a dielectricconstant of a fluoro-treated polyimide versus a time of treatment forhaving the polyimide contain fluorine by exposing the polyimide to anirradiation of a fluoro-containing gas plasma according to the presentinvention.

FIG. 4A is a diagram illustrative of detected values of a secondary ionmass spectrometry with respect to concentration profiles of oxygen,carbon, fluorine and silicon in an untreated polyimide versus a depththereof wherein the detections were carried out before the treatment forhaving the polyimide contain fluorine by exposing the polyimide to anirradiation of a fluoro-containing gas plasma according to the presentinvention.

FIG. 4B is a diagram illustrative of detected values of a secondary ionmass spectrometry with respect to concentration profiles of oxygen,carbon, fluorine and silicon in a fluoro-treated polyimide versus adepth thereof wherein the detections were carried out after thetreatment for having the polyimide contain fluorine by exposing thepolyimide to an irradiation of a fluoro-containing gas plasma accordingto the present invention.

FIG. 5 is a diagram illustrative of a relationship of a dielectricconstant of a fluoro-treated polyimide versus a temperature of asemiconductor substrate formed with the polyimide thereon.

FIG. 6 is a diagram illustrative of a relationship of a dielectricconstant of a fluoro-treated polyimide versus a bias voltage levelapplied to electrodes in a system for exposing the polyimide to an anirradiation of a fluoro-containing gas plasma for having the polyimidecontain fluorine according to the present invention.

FIG. 7 is a diagram illustrative of relationships of currents flowingthrough fluoro-treated and untreated polyimides versus an electric filedapplied to both the polyimides to evaluate resistivities thereofaccording to the present invention.

FIG. 8 is a fragmentary cross sectional elevation view illustrative of asemiconductor device involving a fluoro-containing polyimide prepared bya method of the present invention.

FIG. 9 is a diagram illustrative of fluoro-concentration profiles offluoro-containing polyimide in a depth direction thereof after atreatment for having the polyimide contain fluorine by exposing thepolyimide to an irradiation of a fluoro-containing gas plasma accordingto the present invention.

FIG. 10 is a diagram illustrative of a relationship of a degree of asignal delay with respect to interconnections versus afluoro-concentration of a fluoro-containing polyimide prepared by amethod of the present invention.

DISCLOSURE OF THE INVENTIONS

According to the present invention, a fluorine radical is generated byuse of a radical generator from a fluorine based gas such as CF₄, SF₆,CF₄, NF₃ or C₂ F₆. A polyimide film free of fluorine is prepared bypolymerization of polyimide monomers free of fluorine. The fluoro-freepolyimide film is exposed to a selective irradiation of fluorineradicals in plasma states free of any charge particles so as to preventthe irradiated fluorine radicals from showing an undesirable reactionwith the charge particle on a surface of the polyimide film. During theplasma irradiation, the polyimide film is further kept heated up to asufficient temperature for causing the unreacted fluorine radicals toshow a thermal diffusion into a deeper region of the polyimide film tothereby obtain a fluoro-containing polyimide film.

It is important for the present invention to do a removal of any chargeparticles from the plasma gas for the purpose of preventing theirradiated fluorine radicals from reacting with the charge particles onthe surface of the fluoro-free polyimide. The charge particles mayinclude fluorine ions, CF_(x) ions (x=1-4) and other charge particles.If the charge particles reach onto the surface of the polyimide, thefluorine radicals are likely to react with the charge particles tothereby reside only within the surface region of the polyimide but neverdiffuse into a deep region of the polyimide.

By the way, the fluorine radicals show no reaction to neutral particles.Then, even if the neutral particles reach onto the surface of thepolyimide film, the neutral particles never serve as a bar to theintended thermal diffusion of the fluorine radicals into the inside ofthe polyimide film.

In practice, the required removal of the issued charge particles fromthe plasma gas may be achieved by use of a control grid through whichthe plasma gas containing the fluorine radicals is irradiated onto thepolyimide film as illustrated in FIG. 1. Namely, a polyimide film 108free of any fluorine is formed on a silicon substrate 109. There isgenerated a plasma gas containing not only the fluorine radicals 103such as F* and CF_(x) * but also neutral particles other than thefluorine radicals and further the variety of undesirable chargeparticles 104 such as fluorine ions and CF_(x) ions (x=1-4). The plasmagas is irradiated through the control grid 107 onto the surface of thepolyimide film 108 on the silicon substrate 109. The control grid 107allows the fluorine radicals 103 and the neutral particles to passtherethrough and reach the surface of the polyimide film 108, butprevents the charge particles 104 from passing therethrough. As aresult, the fluorine radicals 103 and the neutral particles only areirradiated onto the surface of the polyimide film 108. Since no chargeparticles reside on the surface of the polyimide film 108, theirradiated fluorine radicals show no reaction with the charge particle.In the meantime, the silicon substrate 109 is kept heated up to apredetermined temperature for causing the thermal diffusion of theunreacted fluorine radicals into the inside of the polyimide film 108 tothereby obtain a fluoro-containing polyimide film.

The conventional method described above is, however, contrast to thepresent invention. According to the conventional method, no removal ofthe issued charge particles from the plasma gas is carried out, forwhich reason the irradiated fluorine radicals show the undesirablereaction with the charge particles on the surface of the fluoro-freepolyimide. As a result, there appears no thermal diffusion of thefluorine radicals into the inside of the polyimide film. Hence, thefluorine is blended only within the surface region of the polyimidefilm.

The description will hereinafter focus on a preferred embodimentaccording to the present invention. FIG. 2 is illustrative of anavailable system for blending fluorine radicals into the polyimide film.A vacuum chamber 204 is placed on a supporting plate 201. The vacuumchamber is coupled to a vacuum pump 202. The vacuum chamber is alsoprovided with a top cap 211. Top and bottom electrodes 205 and 208 areprovided within the vacuum chamber 204 spaced apart from one another. Ahigh power supply 210 is provided at the outside of the vacuum chamber204 to be electrically connected to both the top and bottom electrodes205 and 208 so that AC or DC power is applied across the top and bottomelectrodes 205 and 208. A gas tank 203 within which fluorine basedsource gases are reserved is provided at the outside of the vacuumchamber 204. The gas tank 203 is provided with a slender gas injectionnozzle penetrating into the inside of the vacuum chamber 204 so that aninjection port of the gas injection nozzle is positioned between the topand bottom electrodes 205 and 208. A sample 207 of the fluoro-freepolyimide film formed on the silicon substrate is placed on the bottomelectrode 208. A control grid 206 is placed between the top and bottomelectrodes 205 and 208, provided that the placement position of thecontrol grid is under the gas injection port of the gas injectionnozzle, but over the sample 206. A DC power supply 209 is provided atthe outside of the vacuum chamber 204 to be electrically connected toboth the control grid 206 and the bottom electrode 208 to apply a DCpower across the control grid 206 and the bottom electrode 208. Thebottom electrode 208 is provided with a heater designed for heating thesample 207 up to a predetermined temperature.

Operations of the above described system will be described. The insideof the vacuum chamber 204 is vacuumed by the vacuum pump 202 to a vacuumpressure in the range of from 0.01 to 0.5 Torr. Into the vacuum chamber204, a fluorine based source gas such as CF₄, SF₆, C₂ F₄, NF₃ and C₂ F₈is introduced through the injection nozzle from the gas tank 203. DC orAC power is applied across the top and bottom electrodes 205 and 208 tocause a glow discharge of the injected fluorine based gas between thetop and bottom electrodes 205 and 208. The plasma gas includes thefluorine radicals, charge particles and neutral particles. Further, a DCpower is applied across the control grid 206 and the bottom chamber 208so as to allow only the fluorine radicals and the neutral particles topass through the control grid 206 but prevent the charge particles frompassing through he control grid 206. As a result, the fluorine radicalsand the neutral particles only are irradiated onto the surface of thepolyimide film so that the fluorine radicals show no reaction with thecharge particles on the surface of the polyimide film. Moreover, thesample 207 is heated up to a predetermined temperature by the heaterprovided in the bottom electrode 208 to thereby cause a thermaldiffusion of the fluorine radicals into the inside of the polyimidefilm.

In order to evaluate the effects of the removal of the charge particlesaccording to the present invention but free of any effect of the thermaldiffusion of the fluorine radical, the following experiments werecarried out. A silicon substrate is subjected to a spin coating ofpolyamide acid for subsequent annealing at 350° C. to cause apolymerization thereof, resulting in a deposition of a 0.1 micrometerspolyimide film on the silicon substrate. CF₄ gas is introduced into theinside of the vacuum chamber 204 which is set at a pressure of 0.5 Torr.The top and bottom electrodes are applied with AC power of 5W and thecontrol grid 206 is applied with a positive voltage of 300V. The sample207 is set at a room temperature to separate the effect of the removalof the charge particles from any effect of the thermal diffusion of thefluorine radicals. Under the above conditions, the polyimide film isexposed to the irradiation of the fluorine based gas plasma includingfluorine radicals and neutral particles only free of any chargeparticles for the purpose of having the polyimide contain fluorine byexposing the polyimide to an irradiation of a fluoro-containing gasplasma according to the present invention. FIG. 3 is illustrative of arelationship of a dielectric constant of the above fluoro-treatedpolyimide versus a time of treatment. FIG. 3 indicates the fact that thedielectric constant of the polyimide film is reduced as time passes. Itwas confirmed that the dielectric constant of the polyimide film isreduced as the fluorine concentration of the polyimide film isincreased. In consideration of those matters, it is understood that theblending of the fluorine into the inside of the polyimide filmprogressed well.

FIG. 4A is illustrative of detected values of a secondary ion massspectrometry with respect to concentration profiles of oxygen, carbon,fluorine and silicon in an untreated polyimide versus a depth thereofwherein the detections were carried out before the treatment for havingthe polyimide contain fluorine by exposing the polyimide to theirradiation of the fluoro-containing gas plasma-free of any chargeparticles.

FIG. 4B is illustrative of detected values of the secondary ion massspectrometry with respect to concentration profiles of the aboveindividual elements in a fluoro-treated polyimide wherein the detectionswere carried out after the treatment for having the polyimide containfluorine by exposing the polyimide to the irradiation of thefluoro-containing gas plasma free of any charge particles.

The detected values are relative values but not absolute values. Then,although the fluorine level lies in the vicinity of 1×10⁴ in FIG. 4A, infact the polyimide contains no or almost no fluorine component.Evaluations must be made only on a variation or a difference of thedetected values. In FIG. 4B, the detected values with respect to thefluorine component are considerably increased from that of FIG. 4A. Thismeans that an appreciable amount of the fluorine is well blended intothe inside of the polyimide. Such increase appears over the range of1000 angstroms. This means the fact that the fluorine is blended in awide area of the polyimide so as to reside at a depth of approximately1000 angstroms from the surface thereof.

FIG. 5 is illustrative of a relationship of a dielectric constant of thefluoro-treated polyimide versus a temperature wherein the temperature isvaried from the room temperature to evaluate the effect on the variationof the temperature of the sample. FIG. 5 indicates the fact that thedielectric constant of the polyimide is dropped as the temperaturethereof is, increased up to 300° C. The increase in the temperature ofthe polyimide facilitates the reaction for allowing the polyimide tocontain and chemically bond with the fluorine. Notwithstanding, when thetemperature is increased beyond 300° C., there comes to appear anelimination reaction of the fluorine from the polyimide. As a result,the dielectric constant of the polyimide is increased when thetemperature thereof is increased beyond the above critical temperatureof 300° C. It was confirmed that the range of the temperature of thepolyimide from 100° C. to 300° C. is preferable.

FIG. 6 is illustrative of a relationship of the dielectric constant ofthe fluoro-treated polyimide versus a bias voltage level applied to thecontrol grid. The dielectric constant of the polyimide is reduced as thebias voltage applied to the control grid is increased. When the biasvoltage is increased beyond 300V, no reduction of the dielectricconstant of the polyimide appears. The increase of the bias voltageapplied to the control grid up to a critical voltage of 300V mayincrease a probability in removal of the charge particles by the controlgrid. It was confirmed that the effective range of the voltage appliedto the control grid is 100V to 300V.

FIG. 7 is illustrative of relationships of currents flowing throughfluoro-treated and untreated polyimides versus an electric filed appliedto both the polyimides to evaluate resistivities and conductivitiesthereof. FIG. 7 indicates the fact that the fluoro-containing polyimideshows a higher resistivity and a lower conductivity than those of thefluoro-free polyimide. It is considered that the conductivity of thepolyimide is given by ionized impurities serving as carriers included inthe polyimide. The blending of the fluorine radicals into the polyimidemay reduce the number of ionized impurities serving as carriers includedin the polyimide.

Further, it was confirmed that the use of F₂, SF₆, C₂ F₄, NF₃ and C₂ F₆lead to the same result as the above described result when using CF₄.

Furthermore, it was confirmed that the same result as those describedabove is obtained even when in place of the plasma gas irradiation, thefluorine based gases such as CF₄, F₂, SF₆, C₂ F₄, NF₃ and C₂ F₆ onto atungsten heater to cause a dissociation of the fluorine based gases forthe purpose of generating the fluorine radicals to be irradiated throughthe removal of any charge particles onto the surface of the polyimide.

The above fluoro-containing polyimide film may be formed not only on thesemiconductor layer but also on metal layers serving as interconnectionsand insulation films. It was confirmed that the adhesiveness of thefluoro-containing polyimide film to a base layer depends upon aninterface between two of the above film and layer. When in thefluoro-containing polyimide film the fluorine resides at an appreciableconcentration on the interface to the base layer on which thefluoro-containing polyimide film is formed, the adhesiveness between hetwo layers is reduced. To prevent the reduction in adhesiveness betweenthe two layers, it is required that no fluorine resides on the interfaceeven if the fluorine resides within the polyimide film at a sufficientlyhigh concentration. According to the present invention, there is thuscarried out a control on a fluorine concentration in a depth directionof the polyimide film so that the fluorine concentration approaches orequals zero at the interface, while the fluorine concentration ismaintained at high levels throughout the polyimide film except at theinterface.

FIG. 8 is illustrative of a semiconductor device involving thefluoro-containing polyimide film prepared by a method of the presentinvention wherein the fluoro-containing polyimide film 101 is formed ona first aluminum layer 103. Field oxide films 104 of silicon dioxide areselectively formed on a surface of a silicon substrate 105. The firstaluminum layer 103 is formed on the silicon substrate and on the silicondioxide films 104. The fluoro-containing film 101 is formed on the firstaluminum layer 103. A second aluminum layer 102 is formed on thefluoro-containing polyimide film 101. The fluoro-containing polyimidefilm 101 serves as an inter-layer insulator between the first and secondaluminum layers 102 and 103 serving as interconnections. The polyimidefilm free of fluorine was prepared by subjecting the substrate to a spincoating of polyamide acid and subsequent heat treatment in the range offrom 300° to 400° C. to cause a thermal polymerization of the polyamide.The subsequent blending of the fluorine into the fluoro-free polyimidefilm was carried out by use of the same system of FIG. 2 and process asdescribed above.

CF₄ gas is introduced into the inside of the vacuum chamber 204 which isset at a pressure of 0.5 Torr. The top and bottom electrodes are appliedwith AC power of 5W and the control grid 206 is applied with a positivevoltage of 300V. The sample 207 is set at a temperature of 100° C. Underthe above conditions, the polyimide film is exposed for 30 minutes tothe irradiation of the fluorine based gas plasma including fluorineradicals and neutral particles only, that is, free of any chargeparticles for the purpose of having the polyimide contain fluorine byexposing the polyimide to an irradiation of a fluoro-containing gasplasma according to the present invention.

FIG. 9 is illustrative of fluoro-concentration profiles of the obtainedfluoro-containing polyimide in a depth direction thereof. A measurementof the fluoro-concentration profiles was carried out by use of thesecondary ion mass spectrometry. By constant to FIGS. 4A an 4B, FIG. 9indicates the absolute values of the fluoro-concentrations. The contentor concentration profile with respect to the fluorine in thefluoro-containing polyimide film 101 is gradually dropped toward theinterface to the first aluminum layer 103 so that in the vicinity of theinterface the fluorine concentration comes down to noise levels of theused secondary ion mass spectrometer. This means that in the vicinity ofthe interface the fluorine concentration approaches or equals zero. Thefluorine concentration profile may be controlled by controlling thetemperature of the sample and the time of the exposure treatment. Theexposure treatment may be discontinued just before the fluorine reachesthe interface. In fact, the adhesiveness is increased by 30%.

The temperature of the sample determines a diffusion rate of thefluorine. Keeping the sample at a high temperature provides a gradualslope of the fluorine concentration profile due to a high diffusion rateof the fluorine. By contrast, keeping the sample at a high temperatureprovides a steep slope of the fluorine concentration profile. It is alsopossible to vary the temperature of the sample during the exposuretreatment. In any event, according to the present invention, thetemperature of the sample and the treatment time are so controlled thatin the vicinity of the interface the fluorine concentration approachesor equals zero.

FIG. 10 is a diagram illustrative of a relationship of a degree of asignal delay with respect to interconnections versus thefluoro-concentration of the fluoro-containing polyimide prepared by themethod described above. FIG. 10 indicates that the degree of the signaldelay is simply reduced as the content of the fluorine in the polyimideis increased.

Further, it was confirmed that the use of F₂, SF₆, C₂ F₄, NF₃ and C₂ F₆leads to the same result as the above described result when using CF₄.

Furthermore, it was confirmed that the same result as those describedabove is obtained even when in place of the plasma gas irradiation thefluorine based gases such as CF₄, F₂, SF₆, C₂ F₄, NF₃ and C₂ F₆ wereused onto a tungsten heater to cause a dissociation of the fluorinebased gases for the purpose of generating the fluorine radicals to beirradiated through the removal of any charge particles onto the surfaceof the polyimide.

Whereas modifications of the present invention will no doubt be apparentto a person having ordinary skill in the art, to which the inventionpertains, it is to be understood that embodiments shown and described byway of illustrations are by no means intended to be considered in alimiting sense. Accordingly, it is to be intended to cover by claims allmodifications of the present invention which fall within the spirit andscope of the present invention.

What is claimed is:
 1. A polyimide film containing fluorine formed on abase layer, wherein fluorine is introduced throughout said polyimidefilm such that a fluorine concentration of said film approaches orequals zero at an interface of said polyimide film to said base layer.2. The polyimide film as claimed in claim 1, wherein said base layer isa metal layer.
 3. The polyimide film as claimed in claim 1, wherein saidbase layer is an insulation layer.
 4. The polyimide film as claimed inclaim 1, wherein said base layer is a semiconductor layer.